FDS6982AS
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6982AS
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 30 V Continuous Drain Current (ID):6.3 A 30 nC, 15 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 5 mm |
| Width | 3.99 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 28 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.187 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 8.6 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 2 W |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.9 V |
| Number of Channels | 2 |
| Input capacitance | 610 pF |
| Continuous Drain Current (ID) | 6.3 A |
| Rds On Max | 28 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 24 ns |
| Fall Time | 3 ns |
| Rise Time | 7 ns |
| Gate Charge | 30 nC, 15 nC |
| Drain to Source Resistance | 11 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.4 V |
| Recovery Time | 19 ns |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| Drain to Source Breakdown Voltage | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
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